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| ADVANCE INFORMATION Am29LV065M 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES s Single power supply operation -- 3 volt read, erase, and program operations s Enhanced VersatileI/O control -- Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V s Manufactured on 0.23 m MirrorBit process technology s SecSi (Secured Silicon) Sector region -- 256-byte sector for permanent, secure identification through an 16-byte random Electronic Serial Number, accessible through a command sequence -- May be programmed and locked at the factory or by the customer s Flexible sector architecture -- One hundred twenty-eight 64 Kbyte sectors s Compatibility with JEDEC standards -- Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection s Minimum 100,000 erase cycle guarantee per sector s 20-year data retention at 125C PERFORMANCE CHARACTERISTICS s High performance -- 90 ns access time -- 25 ns page read times -- 0.4 s typical sector erase time -- 3.0 s typical write buffer byte programming time: 32-byte write buffer reduces overall programming time for multiple-byte updates -- 8-byte read page buffer -- 32-byte write buffer s Low power consumption (typical values at 3.0 V, 5 MHz) -- 30 mA typical active read current -- 50 mA typical erase/program current -- 1 A typical standby mode current s Package options -- 48-pin TSOP -- 63-ball FBGA SOFTWARE & HARDWARE FEATURES s Software features -- Program Suspend & Resume: read other sectors before programming operation is completed -- Erase Suspend & Resume: read/program other sectors before an erase operation is completed -- Data# polling & toggle bits provide status -- Unlock Bypass Program command reduces overall multiple-byte programming time -- CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices s Hardware features -- Sector Group Protection: hardware method of preventing write operations within a sector group -- Temporary Sector Unprotect: VID-level method of changing code in locked sectors -- ACC (high voltage) pin accelerates programming time for higher throughput during system production -- Hardware reset pin (RESET#) resets device -- Ready/Busy# pin (RY/BY#) detects program or erase cycle completion This Data Sheet states AMD's current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 25262 Rev: A Amendment/+1 Issue Date: October 3, 2001 Refer to AMD's Website (www.amd.com) for the latest information. ADVANCE INFORMATION GENERAL DESCRIPTION The Am29LV065M is a 64 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 bytes. The device has an 8-bit wide data bus, and can be programmed either in the host system or in standard EPROM programmers. An access time of 90, 100, 110, or 120 ns is available. Note that each device has a specific operating voltage range (VCC) and an I/O voltage range (VIO), as specified in the Product Selector Guide and the Ordering Information sections. The device is offered in a 48-pin TSOP or 63-ball FBGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0 volt power supply for both read and write functions. In addition to a V CC input, a high-voltage accelerated program (ACC) input provides shorter programming times through increased current. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Device programming and erasure are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four. The VersatileI/OTM (VIO) control allows the host system to set the voltage levels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the VIO pin. This allows the device to operate in a 1.8 V or 3 V system environment as required. Hardware data protection measures include a low V CC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. The device reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time. The SecSi (Secured Silicon) Sector provides a 256 byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur. AMD MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection. 2 Am29LV065M ADVANCE INFORMATION PRODUCT SELECTOR GUIDE Part Number VCC = 3.0-3.6 V VCC = 2.7-3.6 V Max. Access Time (ns) Max. CE# Access Time (ns) Max. Page access time (tPACC) Max. OE# Access Time (ns) 90 90 25 25 90R (VIO = 3.0-3.6 V) 101 (VIO = 2.7-3.6 V) 100 100 30 30 112 (VIO = 1.65-3.6 V) 110 110 40 40 120 (VIO = 1.65-3.6 V) 120 120 40 40 Am29LV065M Speed Option BLOCK DIAGRAM RY/BY# VCC VSS VIO RESET# Erase Voltage Generator Input/Output Buffers Sector Switches DQ0-DQ7 WE# ACC State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic STB Data Latch CE# OE# STB VCC Detector Timer Address Latch Y-Decoder Y-Gating X-Decoder Cell Matrix A22-A0 Am29LV065M 3 ADVANCE INFORMATION CONNECTION DIAGRAMS NC A22 A16 A15 A14 A13 A12 A11 A9 A8 WE# RESET# ACC RY/BY# A18 A7 A6 A5 A4 A3 A2 A1 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-Pin Standard TSOP 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC NC A17 VSS A20 A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VIO A21 DQ3 DQ2 DQ1 DQ0 OE# VSS CE# A0 NC NC NC NC A17 VSS A20 A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VIO A21 DQ3 DQ2 DQ1 DQ0 OE# VSS CE# A0 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-Pin Reverse TSOP 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC A22 A16 A15 A14 A13 A12 A11 A9 A8 WE# RESET# ACC RY/BY# A18 A7 A6 A5 A4 A3 A2 A1 NC NC 4 Am29LV065M ADVANCE INFORMATION CONNECTION DIAGRAMS 63-Ball FBGA Top View, Balls Facing Down A8 NC* A7 NC* B8 NC* B7 NC* C7 A14 C6 A9 C5 WE# C4 RY/BY# C3 A7 D7 A13 D6 A8 D5 RESET# D4 ACC D3 A18 D2 A4 E7 A15 E6 A11 E5 A22 E4 NC E3 A6 E2 A2 F7 A16 F6 A12 F5 NC F4 NC F3 A5 F2 A1 G7 A17 G6 A19 G5 DQ5 G4 DQ2 G3 DQ0 G2 A0 H7 NC H6 A10 H5 NC H4 DQ3 H3 NC H2 CE# J7 A20 J6 DQ6 J5 VCC J4 VIO J3 NC J2 OE# K7 VSS K6 DQ7 K5 DQ4 K4 A21 K3 DQ1 K2 VSS L8 NC* L7 NC* M8 NC* M7 NC* A2 NC* A1 NC* B1 NC* C2 A3 L2 NC* L1 M2 NC* M1 NC* * Balls are shorted together via the substrate but not connected to the die. NC* Special Handling Instructions for FBGA Package Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time. Am29LV065M 5 ADVANCE INFORMATION PIN DESCRIPTION A22-A0 DQ7-DQ0 CE# OE# WE# ACC RESET# RY/BY# VCC = 23 Address inputs = 8 Data inputs/outputs = Chip Enable input = Output Enable input = Write Enable input LOGIC SYMBOL 23 A22-A0 CE# OE# WE# DQ7-DQ0 8 = Acceleration input = Hardware Reset Pin input = Ready/Busy output = 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) = Output Buffer power = Device Ground = Pin Not Connected Internally ACC RESET# RY/BY# VIO VIO VSS NC 6 Am29LV065M ADVANCE INFORMATION ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV065M U 90R WH I TEMPERATURE RANGE I = Industrial (-40C to +85C) PACKAGE TYPE E = 48-Pin Standard Pinout Thin Small Outline Package (TS 048) F = 48-Pin Reverse Pinout Thin Small Outline Package (TSR048) WH = 63-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 11 x 12 mm package (FBE063) SPEED OPTION See Product Selector Guide and Valid Combinations SECTOR ARCHITECTURE U = Uniform sector device DEVICE NUMBER/DESCRIPTION Am29LV065M 64 Megabit (8 M x 8-Bit) MirrorBit Uniform Sector Flash Memory with VersatileIO Control 3.0 Volt-only Read, Program, and Erase Valid Combinations for TSOP Package Am29LV065MU90R Am29LV065MU101 Am29LV065MU112 Am29LV065MU120 EI, FI Speed (ns) 90 100 110 120 VIO Range 3.0-3.6 V 2.7-3.6 V 1.65-3.6 V 1.65-3.6 V VCC Range 3.0-3.6 V 2.7-3.6 V Valid Combinations for Fine-Pitch BGA Package Order Number Am29LV065MU90R Am29LV065MU101 WHI Am29LV065MU112 Am29LV065MU120 L065MU11V L065MU12V Package Marking L065MU90R L065MU01V I VCC Speed VIO Range Range (ns) 90 100 110 120 3.0- 3.6 V 2.7- 3.6 V 1.65- 3.6 V 1.65- 3.6 V 2.7- 3.6 V 3.0- 3.6 V Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29LV065M 7 ADVANCE INFORMATION PHYSICAL DIMENSIONS TS 048--48-Pin Standard Thin Small Outline Package Dwg rev AA; 10/99 8 Am29LV065M ADVANCE INFORMATION PHYSICAL DIMENSIONS TSR048--48-Pin Reverse Thin Small Outline Package Dwg rev AA; 10/99 Am29LV065M 9 ADVANCE INFORMATION PHYSICAL DIMENSIONS FBE063--63-Ball Fine-Pitch Ball Grid Array, 12 x 11 mm Package Dwg rev AF; 10/99 10 Am29LV065M ADVANCE INFORMATION REVISION SUMMARY Revision A (August 3, 2001) Initial release as abbreviated Advance Information data sheet. Revision A+1 (October 3, 2001) Global Added 120 ns device, changed 100 ns, VIO = 1.65-2.7 V device to 110 ns, changed 90 ns operating range to 3.0-3.6 V. Physical Dimensions Added section. Trademarks Copyright (c) 2001 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Am29LV065M 11 |
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